WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD4018DN22 MOSFET ndeye -40V, ikozvino -18A, kuramba iri 26mΩ, chiteshi iP-channel, uye pasuru ndeye DFN2X2-6L.
WINSOK MOSFET nzvimbo dzekushandisa
Advanced high cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa Cdv/dt mhedzisiro kudzikira Green Device Inowanikwa, Face recognition equipment MOSFET, e-cigarette MOSFET, midziyo midiki yemumba MOSFET, car charger MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON2409,POTENS MOSFET PDB3909L
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gedhi-Mabviro Voltage | ±20 | V |
| ID@Tc=25℃ | Kuenderera mberi Drain Current, VGS@ -10V1 | -18 | A |
| ID@Tc=70℃ | Kuenderera mberi Drain Current, VGS@ -10V1 | -14.6 | A |
| IDM | 300μS Pulsed Drain Current, VGS=-4.5V2 | 54 | A |
| PD@Tc=25℃ | Total Power Dissipation3 | 19 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference kune 25 ℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-8.0A | --- | 26 | 34 | mΩ |
| VGS=-4.5V , ID=-6.0A | --- | 31 | 42 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=-250uA | -1.0 | -1.5 | -3.0 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-40V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-10V , ID=-1.5A | --- | 27 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.7 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω | --- | 9.8 | --- | ns |
| Tr | Rise Time | --- | 11 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 54 | --- | ||
| Tf | Nguva Yekudonha | --- | 7.1 | --- | ||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 1560 | --- | pF |
| Coss | Output Capacitance | --- | 116 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 97 | --- |
