WSD40120DN56 N-chiteshi 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD40120DN56 MOSFET ndeye 40V, ikozvino iri 120A, kuramba iri 1.85mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, dijitari zvigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET TPH4BAFT PH48 Q544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS@10V1,7 | 120 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS@10V1,7 | 100 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 240 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 104 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V ,VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=20A | --- | 55 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V , VGS=10V ,ID=10A | --- | 76 | 91 | nC |
| Qgs | Gate-Source Charge | --- | 12 | 14.4 | ||
| Qgd | Gate-Drain Charge | --- | 15.5 | 18.6 | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=30V , VGEN=10V , RG=1Ω,ID=1A ,RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Rise Time | --- | 10 | 12 | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 58 | 69 | ||
| Tf | Nguva Yekudonha | --- | 34 | 40 | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Output Capacitance | --- | 690 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 370 | --- |
