WSD30350DN56G N-chiteshi 30V 350A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD30350DN56G MOSFET ndeye 30V, ikozvino i350A, kuramba ndeye 1.8mΩ, chiteshi iN-channel, uye pasuru ndeye DFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, dijitari zvigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current(Iyo kambani Silicon Limited）1,7 | 350 | A |
| ID@TC=70℃ | Kuenderera mberi Drain Current (Silicon Limited）1,7 | 247 | A |
| IDM | Pulsed Drain Current2 | 600 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 1800 | mJ |
| IAS | Avalanche Current | 100 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 104 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.022 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=10V ,ID=20A | --- | 0.48 | 0.62 | mΩ |
| VGS=4.5V , ID=20A | --- | 0.72 | 0.95 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.2 | 1.5 | 2.5 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=10A | --- | 40 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Yese Gedhi Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A | --- | 89 | --- | nC |
| Qgs | Gate-Source Charge | --- | 37 | --- | ||
| Qgd | Gate-Drain Charge | --- | 20 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=15V , VGEN=10V , RG=1Ω,ID=10A | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 34 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 61 | --- | ||
| Tf | Nguva Yekudonha | --- | 18 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 7845 | --- | pF |
| Coss | Output Capacitance | --- | 4525 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 139 | --- |
