WSD30350DN56G N-chiteshi 30V 350A DFN5X6-8 WINSOK MOSFET

zvigadzirwa

WSD30350DN56G N-chiteshi 30V 350A DFN5X6-8 WINSOK MOSFET

tsananguro pfupi:

Chikamu Nhamba:WSD30350DN56G

BVDSS:30V

ID:350A

RDSON:0.48mΩ 

Channel:N-chiteshi

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET chigadzirwa chepamusoro

Iyo voltage yeWSD30350DN56G MOSFET ndeye 30V, ikozvino i350A, kuramba ndeye 1.8mΩ, chiteshi iN-channel, uye pasuru ndeye DFN5X6-8.

WINSOK MOSFET nzvimbo dzekushandisa

E-fodya MOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, dijitari zvigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Continuous Drain Current(Iyo kambani Silicon Limited1,7

350

A

ID@TC=70

Kuenderera mberi Drain Current (Silicon Limited1,7

247

A

IDM

Pulsed Drain Current2

600

A

EAS

Imwe Pulse Avalanche Energy3

1800

mJ

IAS

Avalanche Current

100

A

PD@TC=25

Total Power Dissipation4

104

W

TSTG

Storage Temperature Range

-55 kusvika ku150

TJ

Operating Junction Temperature Range

-55 kusvika ku150

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Kuputsa Voltage VGS=0V ,ID=250uA

30

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Reference ku25,ID=1mA

---

0.022

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V ,ID=20A

---

0.48

0.62

mΩ
VGS=4.5V , ID=20A

---

0.72

0.95

VGS(th)

Gate Threshold Voltage VGS=VDS,ID=250uA

1.2

1.5

2.5

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

---

---

5

IGSS

Gedhi-Mabviro Leakage Current VGS=±20V ,VDS=0V

---

---

±100

nA

gfs

Pamberi Transconductance VDS=5V ,ID=10A

---

40

---

S

Rg

Gate Resistance VDS=0V , VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Yese Gedhi Charge (4.5V) VDS=15V , VGS=4.5V , ID=20A

---

89

---

nC

Qgs

Gate-Source Charge

---

37

---

Qgd

Gate-Drain Charge

---

20

---

Td(pa)

Batidza Kunonoka Nguva VDD=15V , VGEN=10V ,

RG=1Ω,ID=10A

---

25

---

ns

Tr

Rise Time

---

34

---

Td(kudzima)

Kudzima Kunonoka Nguva

---

61

---

Tf

Nguva Yekudonha

---

18

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

7845

---

pF

Coss

Output Capacitance

---

4525

---

Crss

Reverse Transfer Capacitance

---

139

---


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