WSD30300DN56G N-chiteshi 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD20100DN56 MOSFET ndeye 20V, ikozvino i90A, kuramba iri 1.6mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Midzanga yemagetsi MOSFET, drones MOSFET, maturusi emagetsi MOSFET, fascia pfuti MOSFET, PD MOSFET, midziyo midiki yemumba MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gedhi-Mabviro Voltage | ±12 | V |
| ID@TC=25℃ | Continuous Drain Current1 | 90 | A |
| ID@TC=100℃ | Continuous Drain Current1 | 48 | A |
| IDM | Pulsed Drain Current2 | 270 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 80 | mJ |
| IAS | Avalanche Current | 40 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 83 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | Thermal Resistance Junction-ambient1(Statedy State) | 55 | ℃/W |
| RθJC | Thermal Resistance Junction-case1 | 1.5 | ℃/W |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V , ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.68 | 1.0 | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 1.6 | 2.0 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=2.5V , ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=125℃ | --- | --- | 5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±10V , VDS=0V | --- | --- | ±10 | uA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=15V , VGS=10V , ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 14 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 10.2 | --- | ns |
| Tr | Rise Time | --- | 11.7 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 56.4 | --- | ||
| Tf | Nguva Yekudonha | --- | 16.2 | --- | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 4307 | --- | pF |
| Coss | Output Capacitance | --- | 501 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 321 | --- | ||
| IS | Continuous Source Current1,5 | VG=VD=0V , Simba Ikozvino | --- | --- | 50 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/µs , TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 72 | --- | nC |
