WSD3023DN56 N-Ch uye P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Channel:N-Ch uye P-Channel

Package:DFN5*6-8

Product Summery:Mhepo yeWSD3023DN56 MOSFET ndeye 30V/-30V, ikozvino i14A/-12A, kuramba ndeye 14mΩ/23mΩ, chiteshi ndiN-Ch uye P-Channel, uye pasuru iri DFN5 * 6-8.

Applications:Drones, mota, mota dzemagetsi, midziyo mikuru.

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Product Detail

Application

Product Tags

General Description

Iyo WSD3023DN56 ndiyo yakanyanya kuita mugero N-ch uye P-ch MOSFETs ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda echinofanana buck converter application.Iyo WSD3023DN56 inosangana neRoHS uye Green Chigadzirwa chinodiwa 100% EAS yakavimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Yepamberi yakakwira cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt mhedzisiro inodzikira, 100% EAS Yakavimbiswa, Green Device Inowanikwa.

Applications

High Frequency Point-of-Load Synchronous Buck Converter yeMB/NB/UMPC/VGA,Networking DC-DC Power System,CCFL Back-light Inverter,Drones,motor,magetsi emotokari, midziyo mikuru.

nhamba yezvinhu zvinoenderana

PANJIT PJQ5606

Zvakakosha parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Ch	P-Ch	Units
VDS	Drain-Source Voltage	30	-30	V
VGS	Gedhi-Mabviro Voltage	±20	±20	V
ID	Continuous Drain Current, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Continuous Drain Current, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Current Tested, VGS(NP)=10V	48	-48	A
EAS c	Avalanche Energy, Single pulse , L=0.5mH	20	20	mJ
IAS c	Avalanche Yazvino, Kurova kamwe chete , L=0.5mH	9	-9	A
PD	Kuparara Kwesimba Kwakazara, Ta=25℃	5.25	5.25	W
TSTG	Storage Temperature Range	-55 kusvika 175	-55 kusvika 175	℃
TJ	Operating Junction Temperature Range	175	175	℃
RqJA b	Thermal Resistance-Junction kuenda kuAmbient,Steady State	60	60	℃/W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃/W

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source On-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source On-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Total Gate Charge	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Source Charge		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(pa)e	Batidza Kunonoka Nguva	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Rise Time		---	8.6	---
Td(kubva)e	Kudzima Kunonoka Nguva		---	16	---
Tfe	Nguva Yekudonha		---	3.6	---
Cisse	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Cosse	Output Capacitance		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---