WSD30150ADN56 N-chiteshi 30V 145A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD30150DN56 MOSFET ndeye 30V, ikozvino i150A, kuramba i1.8mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-midzanga yeMOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa kweMOSFET, majaja emota MOSFET, controller MOSFET, zvigadzirwa zvedhijitari MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
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Onsemi,FAIRCHILD MOSFET FDMC81DCCM.
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TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS@10V1,7 | 150 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS@10V1,7 | 83 | A |
| IDM | Pulsed Drain Current2 | 200 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 125 | mJ |
| IAS | Avalanche Current | 50 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 62.5 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.02 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=10V ,ID=20A | --- | 1.8 | 2.4 | mΩ |
| VGS=4.5V , ID=15A | 2.4 | 3.2 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=10A | --- | 27 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Yese Gedhi Charge (4.5V) | VDS=15V , VGS=4.5V , ID=30A | --- | 26 | --- | nC |
| Qgs | Gate-Source Charge | --- | 9.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11.4 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=15V , VGEN=10V , RG=6Ω,ID=1A, RL=15Ω. | --- | 20 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 69 | --- | ||
| Tf | Nguva Yekudonha | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2560 | 3200 | 3850 | pF |
| Coss | Output Capacitance | 560 | 680 | 800 | ||
| Crss | Reverse Transfer Capacitance | 260 | 320 | 420 |
