WSD30140DN56 N-chiteshi 30V 85A DFN5*6-8 WINSOK MOSFET

WSD30140DN56 N-channel 30V 85A DFN5*6-8 WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSD30140DN56

BVDSS:30V

RDSON:1.7mΩ

ID:85A

Channel:N-chiteshi

Package:DFN5*6-8

Product Summery:Iyo voltage yeWSD30140DN56 MOSFET ndeye 30V, ikozvino i85A, kuramba ndeye 1.7mΩ, chiteshi iN-channel, uye pasuru iDFN5 * 6-8.

Applications:Fodya dzemagetsi, machaja asina waya, drones, kurapwa, majaja emota, ma controller, zvigadzirwa zvedhijitari, midziyo midiki, zvemagetsi zvevatengi, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSD30140DN56 ndiyo yakanyanya kuita mugero N-channel MOSFET ine yakakwira zvakanyanya sero density inopa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda synchronous buck converter application. WSD30140DN56 inoenderana neRoHS uye zvakasvibirira chigadzirwa zvinodiwa, 100% EAS vimbiso, yakazara basa kuvimbika kwakabvumidzwa.

Features

Yepamberi yakakwira cell density Trench tekinoroji, yekupedzisira-yakaderera gedhi kuchaja, yakanakisa CdV/dt mhedzisiro yekumisikidza, 100% EAS vimbiso, girinhi michina iripo.

Applications

High-frequency point-of-load synchronization, buck converters, networked DC-DC power systems, magetsi ekushandisa, fodya yemagetsi, wireless charger, drones, kurapwa, kuchaja mota, controller, zvigadzirwa zvemadhijitari, midziyo midiki, zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314. PANTMFS4847N. VISHAY SiRA62DP. ST STL86N3LLH6AG. INFINEON BSC050N03MSG. TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A. NXP PH2520U. TOSHIBA TPH4R803PL TPH3R203NL. ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN. PANJIT PJQ5410. AP AP3D5R0MT. NIKO PK610SA, PK510BA. POTENS PDC3803R

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ 10V1,7	85	A
ID@TC=70℃	Kuenderera mberi Drain Current, VGS @ 10V1,7	65	A
IDM	Pulsed Drain Current2	300	A
PD@TC=25℃	Total Power Dissipation4	50	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=15A		2.5	3.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=5V , ID=20A	---	90	---	S
Qg	Yese Gedhi Charge (4.5V)	VDS=15V , VGS=4.5V , ID=20A	---	26	---	nC
Qgs	Gate-Source Charge		---	9.5	---
Qgd	Gate-Drain Charge		---	11.4	---
Td(pa)	Batidza Kunonoka Nguva	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Rise Time		---	6	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	38.5	---
Tf	Nguva Yekudonha		---	10	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	3000	---	pF
Coss	Output Capacitance		---	1280	---
Crss	Reverse Transfer Capacitance		---	160	---