WSD25280DN56G N-chiteshi 25V 280A DFN5X6-8 WINSOK MOSFET

zvigadzirwa

WSD25280DN56G N-chiteshi 25V 280A DFN5X6-8 WINSOK MOSFET

tsananguro pfupi:

Chikamu Nhamba:WSD25280DN56G

BVDSS:25V

ID:280A

RDSON:0.7mΩ 

Channel:N-chiteshi

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET chigadzirwa chepamusoro

Iyo voltage yeWSD25280DN56G MOSFET ndeye 25V, ikozvino i280A, kuramba ndeye 0.7mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.

WINSOK MOSFET nzvimbo dzekushandisa

High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Power System,Power Tool Application,E-fodya MOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.

WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu

Nxperian MOSFET PSMN1R-4ULD.

POTENS Semiconductor MOSFET PDC262X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

25

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Continuous Drain Current(Iyo kambani Silicon Limited1,7

280

A

ID@TC=70

Kuenderera mberi Drain Current (Silicon Limited1,7

190

A

IDM

Pulsed Drain Current2

600

A

EAS

Imwe Pulse Avalanche Energy3

1200

mJ

IAS

Avalanche Current

100

A

PD@TC=25

Total Power Dissipation4

83

W

TSTG

Storage Temperature Range

-55 kusvika ku150

TJ

Operating Junction Temperature Range

-55 kusvika ku150

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Kuputsa Voltage VGS=0V ,ID=250uA

25

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Reference ku25,ID=1mA

---

0.022

---

V/

RDS(V)

Static Drain-Source On-Resistance2 VGS=10V ,ID=20A

---

0.7

0.9 mΩ
VGS=4.5V , ID=20A

---

1.4

1.9

VGS(th)

Gate Threshold Voltage VGS=VDS,ID=250uA

1.0

---

2.5

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25

---

---

1

uA

VDS=20V , VGS=0V , TJ=55

---

---

5

IGSS

Gedhi-Mabviro Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Pamberi Transconductance VDS=5V ,ID=10A

---

40

---

S

Rg

Gate Resistance VDS=0V , VGS=0V , f=1MHz

---

3.8

1.5

Ω

Qg

Yese Gedhi Charge (4.5V) VDS=15V , VGS=4.5V , ID=20A

---

72

---

nC

Qgs

Gate-Source Charge

---

18

---

Qgd

Gate-Drain Charge

---

24

---

Td(pa)

Batidza Kunonoka Nguva VDD=15V , VGEN=10V ,RG=1Ω,ID=10A

---

33

---

ns

Tr

Rise Time

---

55

---

Td(kudzima)

Kudzima Kunonoka Nguva

---

62

---

Tf

Nguva Yekudonha

---

22

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

7752

---

pF

Coss

Output Capacitance

---

1120

---

Crss

Reverse Transfer Capacitance

---

650

---

 

 


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