WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSD20L120DN56

BVDSS:-20V

RDSON:2.1mΩ

ID:-120A

Channel:P-channel

Package:DFN5*6-8

Product Summery:Iyo MOSFET WSD20L120DN56 inoshanda pa -20 volts uye inodhirowa ikozvino ye -120 amps. Iyo ine kushorwa kwe2.1 millionhms, P-channel, uye inouya muDFN5 * 6-8 package.

Applications:E-fodya, machaja asina waya, mota, zvidhori, midziyo yekurapa, majaja emotokari, zvidzori, midziyo yedhijitari, midziyo midiki, nemagetsi evatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSD20L120DN56 ndeyepamusoro-inoita P-Ch MOSFET ine yakakwira-density sero chimiro, ichipa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda anowirirana buck anoshandura anoshandisa. Iyo WSD20L120DN56 inosangana ne100% EAS zvinodiwa zveRoHS uye zvigadzirwa zvine hushamwari kwezvakatipoteredza, zvine mvumo yekuvimbika yakazara.

Features

1, Yepamberi yakakwirira sero density Trench tekinoroji
2, Super Low Gate Charge
3, Yakanakisa CdV/dt mhedzisiro inoderera
4, 100% EAS Yakavimbiswa 5, Green Device Inowanikwa

Applications

High Frequency Point-of-Load Synchronous Buck Converter yeMB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-fodya, Wireless Charger, Motors, Drones, Medical, Car Charger, Controller, Digital Products, Zvishandiso Zvidiki zvekumba, Consumer Electronics.

nhamba yezvinhu zvinoenderana

AOS AON6411,NIKO PK5A7BA

Zvakakosha parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	10s	steady State	Units
VDS	Drain-Source Voltage	-20		V
VGS	Gedhi-Mabviro Voltage	±10		V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ -10V1	-120		A
ID@TC=100℃	Kuenderera mberi Drain Current, VGS @ -10V1	-69.5		A
ID@TA=25℃	Kuenderera mberi Drain Current, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Kuenderera mberi Drain Current, VGS @ -10V1	-24	-18	A
IDM	Pulsed Drain Current2	-340		A
EAS	Imwe Pulse Avalanche Energy3	300		mJ
IAS	Avalanche Current	-36		A
PD@TC=25℃	Total Power Dissipation4	130		W
PD@TA=25℃	Total Power Dissipation4	6.8	6.25	W
TSTG	Storage Temperature Range	-55 kusvika ku150		℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = -1mA	---	-0.0212	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-20A	---	2.8	3.7
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	4.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	-6
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=-5V , ID=-20A	---	100	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2	5	Ω
Qg	Total Gate Charge (-4.5V)	VDS=-10V , VGS=-4.5V , ID=-20A	---	100	---	nC
Qgs	Gate-Source Charge		---	21	---
Qgd	Gate-Drain Charge		---	32	---
Td(pa)	Batidza Kunonoka Nguva	VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A ,RL=0.5Ω	---	20	---	ns
Tr	Rise Time		---	50	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	100	---
Tf	Nguva Yekudonha		---	40	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	4950	---	pF
Coss	Output Capacitance		---	380	---
Crss	Reverse Transfer Capacitance		---	290	---