WSD2090DN56 N-chiteshi 20V 80A DFN5*6-8 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

ID:80A

Channel:N-chiteshi

Package:DFN5*6-8

Product Summery:Iyo voltage yeWSD2090DN56 MOSFET ndeye 20V, ikozvino i80A, kuramba ndeye 2.8mΩ, chiteshi iN-channel, uye pasuru ndeye DFN5 * 6-8.

Applications:Fodya dzemagetsi, madrones, maturusi emagetsi, fascia pfuti, PD, midziyo midiki yemumba, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSD2090DN56 ndiyo yepamusoro-soro yekuita mugero N-Ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye gedhi kubhadharisa kune mazhinji einopindirana buck converter application.Iyo WSD2090DN56 inosangana neRoHS uye Green Chigadzirwa chinodiwa 100% EAS yakavimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Yepamberi yakakwira cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV / dt mhedzisiro inoderera, 100% EAS Yakavimbiswa, Green Chishandiso Chinowanikwa

Applications

Chinja, Sitimu Yemagetsi, Chinja Chinja, fodya yemagetsi, drones, maturusi emagetsi, fascia pfuti, PD, midziyo midiki yemumba, nezvimwe.

nhamba yezvinhu zvinoenderana

AOS AON6572

Zvakakosha parameters

Absolute Maximum Ratings (TC=25℃kunze kwekunge zvaratidzwa)

Symbol	Parameter	Max.	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gedhi-Mabviro Voltage	±12	V
ID@TC=25℃	Kunoenderera mberi Drain Current, VGS @ 10V1	80	A
ID@TC=100℃	Kunoenderera mberi Drain Current, VGS @ 10V1	59	A
IDM	Pulsed Drain Current note1	360	A
EAS	Imwe Pulsed Avalanche Energy note2	110	mJ
PD	Kuparadza Simba	81	W
RθJA	Thermal Resistance, Junction to Case	65	℃/W
RθJC	Thermal Resistance Junction-Nyaya 1	4	℃/W
TJ, TSTG	Kushanda uye Kuchengetedza Temperature Range	-55 kusvika +175	℃

Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Conditions	Min	Typ	Max	Units
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = 1mA	---	0.018	---	V/℃
VGS(th)	Gate Threshold Voltage	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(V)	Static Drain-Source On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(V)	Static Drain-Source On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gedhi Voltage Drain Current	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Gate-Muviri Leakage Current	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Output Capacitance		---	460	---
Crss	Reverse Transfer Capacitance		---	446	---
Qg	Total Gate Charge	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Gate-Source Charge		---	1.73	---
Qgd	Gate-Drain Charge		---	3.1	---
tD(pa)	Batidza Kunonoka Nguva	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Batidza Rise Nguva		---	37	---
tD(kudzima)	Kudzima Kunonoka Nguva		---	63	---
tf	Turn-off Fall Time		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V