WSD100N15DN56G N-chiteshi 150V 100A DFN5X6-8 WINSOK MOSFET

Chikamu Nhamba:WSD100N15DN56G

BVDSS:150V

ID:100A

RDSON:6mΩ

Channel:N-chiteshi

Package:DFN5X6-8

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Product Detail

Iyo voltage yeWSD100N15DN56G MOSFET ndeye 150V, ikozvino i100A, kuramba ndeye 6mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.

Magetsi emagetsi anopa MOSFET, PDs MOSFET, drones MOSFET, fodya yemagetsi MOSFET, midziyo mikuru MOSFET, uye maturusi emagetsi MOSFET.

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	150	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID	Kuenderera mberi Drain Current, V_GS@10V(T_C=25℃)	100	A
IDM	Pulsed Drain Current	360	A
EAS	Imwe Pulse Avalanche Energy	400	mJ
P_D	Total Power Dissipation..._C=25℃)	160	W
RθJA	Thermal resistance, junction-ambient	62	℃/W
RθJC	Thermal resistance, junction-case	0.78	℃/W
TSTG	Storage Temperature Range	-55 kusvika 175	℃
T_J	Operating Junction Temperature Range	-55 kusvika 175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Kuputsa Voltage	V_GS=0V ,I_D=250uA	150	---	---	V
RDS(V)	Static Drain-Source On-Resistance²	V_GS=10V ,I_D=20A	---	9	12	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS,I_D=250uA	2.0	3.0	4.0	V
IDSS	Drain-Source Leakage Current	V_DS=100V , V_GS=0V , T_J=25℃	---	---	1	uA
IGSS	Gedhi-Mabviro Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
Q_g	Total Gate Charge	V_DS=50V , V_GS=10V ,I_D=20A	---	66	---	nC
Q_gs	Gate-Source Charge		---	26	---
Q_gd	Gate-Drain Charge		---	18	---
Td(pa)	Batidza Kunonoka Nguva	V_DD=50V ,V_GS=10V R_G=2Ω, I_D=20A	---	37	---	ns
T_r	Rise Time		---	98	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	55	---
T_f	Nguva Yekudonha		---	20	---
C_iss	Input Capacitance	V_DS=30V , V_GS=0V , f=1MHz	---	5450	---	pF
Coss	Output Capacitance		---	1730	---
C_rss	Reverse Transfer Capacitance		---	195	---