WSD100N06GDN56 N-chiteshi 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD100N06GDN56 MOSFET ndeye 60V, ikozvino i100A, kuramba iri 3mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Magetsi emagetsi anopa MOSFET, PDs MOSFET, drones MOSFET, fodya yemagetsi MOSFET, midziyo mikuru MOSFET, uye maturusi emagetsi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSXFET PDC69
MOSFET parameters
| Symbol | Parameter | Rating | Units | ||
| VDS | Drain-Source Voltage | 60 | V | ||
| VGS | Gedhi-Mabviro Voltage | ±20 | V | ||
| ID1,6 | Continuous Drain Current | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Maximum Power Dissipation | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Yazvino, Single pulse | 45 | A | ||
| EAS3 | Imwe Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Maximum Junction Temperature | 150 | ℃ | ||
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction kune ambient | steady State | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction kune Nyaya | steady State | 1.5 | ℃/W | |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Static | |||||||
| V(BR)DSS | Drain-Source Kuputsa Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gedhi Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Pamusoro peHunhu | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(yakabatidzwa)2 | Drain-Source On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Kuchinja | |||||||
| Qg | Total Gate Charge | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Gate-Sour Charge | 16 | nC | ||||
| Qgd | Gate-Drain Charge | 4.0 | nC | ||||
| td (pa) | Batidza Kunonoka Nguva | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Batidza Rise Nguva | 8 | ns | ||||
| td(kudzima) | Kudzima Kunonoka Nguva | 50 | ns | ||||
| tf | Turn-off Fall Time | 11 | ns | ||||
| Rg | Gat resistance | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dynamic | |||||||
| Ciss | In Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Out Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Drain-Source Diode Hunhu uye Maximum Ratings | |||||||
| IS1,5 | Continuous Source Current | VG=VD=0V , Simba Yazvino | 55 | A | |||
| ISM | Pulsed Source Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
