Iyo simbi-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, kana MOS FET) imhando yemunda-effect transistor (FET), inowanzogadzirwa neinodzorwa oxidation yesilicon. Iine gedhi rakavharidzirwa, iyo voltage iyo inotarisa conductivity yemudziyo.
Chinhu chayo chikuru ndechekuti pane silicon dioxide insulating layer pakati pegedhi resimbi uye chiteshi, saka ine yakakwirira yekupinza yekupikisa (kusvika ku1015Ω). Iyo zvakare yakakamurwa kuita N-chiteshi chubhu uye P-chiteshi chubhu. Kazhinji iyo substrate (substrate) uye sosi S zvakabatanidzwa pamwechete.
Zvinoenderana neakasiyana maitiro ekuita, maMOSFET akakamurwa kuva ekusimudzira mhando uye depletion mhando.
Iyo inonzi yekuwedzera mhando inoreva: kana VGS = 0, iyo chubhu iri munzvimbo yakachekwa. Mushure mekuwedzera iyo chaiyo VGS, vatakuri vazhinji vanokwezvwa kugedhi, nokudaro "kunatsiridza" vatakuri munzvimbo ino uye kugadzira chiteshi chekufambisa. .
Iyo depletion mode inoreva kuti kana VGS = 0, chiteshi chinoumbwa. Kana iyo VGS yakarurama yawedzerwa, vatakuri vakawanda vanogona kuyerera vachibuda kunze kwechiteshi, nokudaro "kupedza" vatakuri uye kubvisa chubhu.
Siyanisa chikonzero: Kupokana kweJFET kunopfuura 100MΩ, uye transconductance yakakwira zvakanyanya, kana gedhi richitungamirwa, nzvimbo yemukati magineti iri nyore kuona iyo inoshanda voltage data chiratidzo pagedhi, kuitira kuti pombi iite. kuva kusvika, kana kuti kunenge kuri-ku-off. Kana iyo induction voltage yemuviri inokurumidza kuwedzerwa kugedhi, nekuti kiyi yemagetsi kupindira kwakasimba, mamiriro ari pamusoro achanyanya kukosha. Kana tsono yemamita ikatsauka zvakanyanya kuruboshwe, zvinoreva kuti pombi inenge yasvika, iyo drain-sosi resistor RDS inowedzera, uye huwandu hwekudonhedza-source ikozvino hunodzikira IDS. Sezvineiwo, tsono yemamita inotsvedza zvakanyanya kurudyi, zvichiratidza kuti pombi inenge iri-yakadzimwa, RDS inodzika, uye IDS inokwira. Nekudaro, kwakananga kwainochinjirwa tsono yemamita kunofanirwa kuenderana neakanaka uye asina kunaka matanda eiyo induced voltage (yakanaka nzira inoshanda voltage kana reverse gwara rekushanda voltage) uye yepakati inoshanda yepombi.
WINSOK DFN3x3 MOSFET
Tichitora iyo N chiteshi semuenzaniso, inogadzirwa paP-mhando silicon substrate ine mbiri yakanyanya doped sosi diffusion matunhu N+ uye madhiraini diffusion matunhu N+, uye ipapo sosi electrode S uye drain electrode D inotungamirwa kunze zvakateerana. Iyo sosi uye substrate yakabatana mukati, uye ivo vanogara vachichengetedza zvakafanana kugona. Kana iyo dhiraivha yakabatana kune yakanaka terminal yemagetsi uye sosi yakabatana kune yakaipa terminal yemagetsi uye VGS = 0, chiteshi ikozvino (kureva drain current) ID=0. Sezvo VGS ichiwedzera zvishoma nezvishoma, inokwezvwa negedhi rakanaka regedhi, vatakuri vashoma vanopomerwa zvisina kunaka vanonyengerwa pakati pematunhu maviri ekupararira, vachigadzira N-mhando chiteshi kubva pakudonhedza kuenda kutsime. Kana VGS yakakura kupfuura yekutendeuka-on voltage VTN yechubhu (kazhinji inenge +2V), iyo N-channel chubhu inotanga kuitisa, ichigadzira dhiraivha ikozvino ID.
VMOSFET (VMOSFET), zita rayo rakazara ndiV-groove MOSFET. Iyo ichangobva kugadzirwa yakakwirira-inoshanda, simba switching mudziyo mushure meMOSFET. Haisi kungogara nhaka iyo yakakwira yekupinza impedance yeMOSFET (≥108W), asiwo diki yekutyaira ikozvino (inenge 0.1μA). Iyo inewo yakanakisa hunhu senge yakakwira inomira voltage (kusvika 1200V), hombe inoshanda ikozvino (1.5A ~ 100A), yakakwirira kubuda simba (1 ~ 250W), yakanaka transconductance mutsara, uye nekukurumidza switching kumhanya. Chaizvoizvo nekuti inosanganisa zvakanakira vacuum machubhu uye magetsi transistors, iri kushandiswa zvakanyanya mumagetsi amplifiers (voltage amplification inogona kusvika zviuru zvenguva), magetsi amplifiers, switching magetsi emagetsi uye inverters.
Sezvatinoziva tese, gedhi, sosi uye kudonhedza kwechinyakare MOSFET iri padivi pendege imwechete yakachinjika pane chip, uye kushanda kwayo ikozvino kunoyerera munzira yakachinjika. Iyo VMOS chubhu yakasiyana. Iine maitiro maviri makuru ekugadzirisa: kutanga, gedhi resimbi rinotora V-shaped groove structure; chechipiri, ine vertical conductivity. Sezvo dhiraini ichidhonzwa kubva kumashure kwechip, iyo ID haiyerere yakatwasuka ichitevedza chip, asi inotanga kubva kune yakanyanya doped N+ dunhu (mabviro S) uye inoyerera ichipinda munzvimbo isina kurongeka N-drift kuburikidza neP chiteshi. Pakupedzisira, inosvika pasi pasi kuti idonhe D. Nokuti kuyerera kwe-cross-sectional area kunowedzera, mafungu makuru anogona kupfuura. Sezvo paine silicon dioxide insulating layer pakati pegedhi uye chip, ichiri gedhi rakavharirwa MOSFET.
Zvakanakira kushandisa:
MOSFET chinhu chinodzorwa nemagetsi, nepo transistor chiri chinhu chinodzorwa parizvino.
MOSFETs inofanira kushandiswa kana zvishoma zvishoma zvemazuva ano zvinobvumirwa kutorwa kubva kune chiratidzo chechiratidzo; ma transistors anofanirwa kushandiswa kana chiratidzo chemagetsi chadzikira uye yakawanda yazvino inobvumirwa kudhonzwa kubva kunobva chiratidzo. MOSFET inoshandisa vatakuri vazhinji kuitisa magetsi, saka inodaidzwa kuti unipolar mudziyo, nepo ma transistors anoshandisa ruzhinji rwevatakuri uye vashoma vanotakura magetsi, saka inodaidzwa kunzi bipolar mudziyo.
Kunobva uye kudonhedza kwemamwe maMOSFET anogona kushandiswa achichinjana, uye gedhi voltage inogona kuve yakanaka kana yakaipa, zvichiita kuti iwedzere kuchinjika kupfuura matatu.
MOSFET inogona kushanda pasi pezvishoma zvazvino uye zvakaderera voltage mamiriro, uye maitiro ayo ekugadzira anogona nyore kubatanidza akawanda maMOSFET pane silicon chip. Naizvozvo, MOSFET yakashandiswa zvakanyanya mumasekete makuru akabatanidzwa.
Olueky SOT-23N MOSFET
Iwo anoenderana ekushandisa maitiro eMOSFET uye transistor
1. Kwakabva s, gedhi g, uye kudonhedza d kweMOSFET zvinoenderana neemitter e, base b, uye muunganidzi c wetransistor zvakateerana. Mabasa avo akafanana.
2. MOSFET mudziyo wemagetsi unodzorwa nevoltage, iD inodzorwa nevGS, uye ayo amplification coefficient gm kazhinji idiki, saka kugona kwekukudza kweMOSFET kwakashata; iyo transistor ndeyezvino-inodzorwa ikozvino mudziyo, uye iC inodzorwa neB (kana iE).
3. Gedhi reMOSFET rinokwevera anenge asina ikozvino (ig»0); nepo hwaro hwe transistor nguva dzose ichikwevera imwe yazvino kana transistor iri kushanda. Naizvozvo, iyo gedhi yekupinza yekupokana yeMOSFET yakakwirira kupfuura yekupinza yekupokana kweiyo transistor.
4. MOSFET inoumbwa nevazhinji vanotakura vanobatanidzwa mukuitisa; transistors vane vatakuri vaviri, multicarriers uye vashoma vatakuri, vanobatanidzwa conduction. Kuwanda kwevatakuri vashoma kunokanganiswa zvakanyanya nezvinhu zvakaita setembiricha uye nemwaranzi. Naizvozvo, maMOSFET ane kugadzikana kuri nani kwekushisa uye kusimba kwemwaranzi kuramba kupfuura transistors. MOSFETs inofanira kushandiswa apo mamiriro ezvakatipoteredza (tembiricha, nezvimwewo) anosiyana zvikuru.
5. Kana iyo sosi yesimbi uye substrate yeMOSFET yakabatana pamwechete, tsime uye dhiraivha zvinogona kushandiswa zvakasiyana, uye maitiro anochinja zvishoma; nepo muunganidzi uye emitter ye triode inoshandiswa zvakasiyana, maitiro akasiyana zvakanyanya. Iyo β kukosha ichaderedzwa zvakanyanya.
6. Ruzha rwakakwana rweMOSFET rwakanyanya. MOSFET inofanirwa kushandiswa zvakanyanya sezvinobvira muchikamu chekuisa cheyakaderera-ruzha amplifier maseketi uye maseketi anoda yakakwira chiratidzo-ku-ruzha reshiyo.
7. Zvose MOSFET netransistor zvinogona kuumba masekete akasiyana-siyana eamplifier uye kushandura maseketi, asi yekutanga ine nzira yakapfava yekugadzira uye ine mabhenefiti ekushomeka kwesimba rekushandisa, kugadzikana kwakanaka kwekupisa, uye yakakura yekushanda magetsi emagetsi. Naizvozvo, inoshandiswa zvakanyanya muhukuru-hukuru uye yakakura kwazvo-yakakura-yakasanganiswa maseketi.
8. Transistor ine hombe pa-resistance, nepo MOSFET ine diki pa-resistance, mazana mashoma mΩ chete. Mumidziyo yemagetsi yazvino, MOSFETs anowanzo shandiswa sema switch, uye kugona kwavo kwakakwira.
WINSOK SOT-323 encapsulation MOSFET
MOSFET vs. Bipolar Transistor
MOSFET mudziyo unodzorwa nemagetsi, uye gedhi haritore zvarino, nepo transistor iri mudziyo unodzorwa-zvino, uye chigadziko chinofanira kutora imwe yazvino. Naizvozvo, kana yakayerwa ikozvino yechiratidzo sosi idiki zvakanyanya, MOSFET inofanirwa kushandiswa.
MOSFET inotakura-akawanda conductor, nepo vese vatakuri ve transistor vanotora chikamu mukuitisa. Sezvo kuwanda kwevatakuri vatakuri kunotarisisa zvakanyanya kumamiriro ekunze akadai sekushisa uye nemwaranzi, MOSFET inonyanya kukodzera mamiriro ezvinhu apo nharaunda inochinja zvakanyanya.
Pamusoro pekushandiswa semidziyo yeamplifier uye switch inodzoreka senge transistors, maMOSFET anogona zvakare kushandiswa sevoltage-inodzorwa mutsara mutsara resistors.
Kunobva uye kudonhedza kweMOSFET kwakaenzanirana muchimiro uye inogona kushandiswa zvakasiyana. Iyo gedhi-sosi voltage ye depletion modhi MOSFET inogona kuve yakanaka kana yakaipa. Naizvozvo, kushandisa MOSFETs kunoshanduka-shanduka kupfuura transistors.
Nguva yekutumira: Oct-13-2023
